Silicon IC process simulator
Physical Model in CSuprem
Based on physical models for ion implantation, deposition, etching, diffusion, and oxidation, it is possible to perform one-dimensional, two-dimensional, and three-dimensional process simulations of various semiconductor structures. It is an indispensable and reliable accurate simulation tool for controlling research and development costs in IC manufacturing processes. It can output doping profiles for device simulators.
- Company：クロスライトソフトウェアインク日本支社
- Price：Other
